专利名称：Method for forming a planarized composite
metal layer in a semiconductor device
发明人：Sang-in Lee,Chang-soo Park,Jeong-ha Son申请号：US07/828458申请日：19920131公开号：US05266521A公开日：19931130
摘要：A method for manufacturing a semiconductor device, comprising the steps offorming an insulating interlayer on a semiconductor substrate to provide a
semiconductor intermediate product, providing the insulating interlayer with an opening,forming a first metal layer on the semiconductor intermediate product, heat-treating thefirst metal layer to fill up the opening with the metal, forming a second metal layer onthe first metal layer, and then heat-treating the second layer to planarize the metallayer. An alternative embodiment of the invention encompasses a method formanufacturing a semiconductor device, comprising the steps of providing a
semiconductor wafer with an opening formed thereon, forming a metal layer on thesemiconductor wafer, and then heat- treating the metal layer to fill up the opening withthe metal, wherein pure Al or an aluminum alloy having no Si component is used as themetal in forming the metal layer.
申请人：SAMSUNG ELECTRONICS CO., LTD.
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