专利名称：Method for depositing a metal coating on a
semiconductor element and semiconductorelement
发明人：BERBERICH, SVEN申请号：EP12154190.8申请日：20120207公开号：EP2500927A3公开日：20140730
专利附图：
摘要：the application concerns a part and method for galvanic deposition of a firstkontaktmetallschicht on contact surfaces of a majority of the waferverbund present
semiconductor components with a pn transition whose p - donated volumenbereich afirst surface and its n - volumenbereich donated a second surface adjacent and secondcontact surfacesthe second surface of the semiconductor devices, training isfl\üssigkeitsdicht with a kontakteinrichtung included, with at least one
kontaktelement kontakteinrichtung in electric contact with the second contact surfacesof the semiconductor devices and an external ansch lusselement contains.the
semiconductor devices are positioned in a kontakteinrichtung galvanikbad with at leastone electrode inserted in the electrode, and the dc voltage of the kontakteinrichtunganschlusselement created, resulting in the first contact surfaces of the semiconductordevices. tall the electrode separation.
申请人：SEMIKRON ELEKTRONIK GMBH & CO. KG
地址：Sigmundstrasse 200 90431 Nürnberg DE
国籍：DE
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