Semiconductor device separation using a patterned

专利名称：Semiconductor device separation using a

patterned laser projection

发明人：Mark Gottfried,Michael G. Brown,Ivan

Eliashevich,Robert F. Karlicek, Jr.,James E.Nering

申请号：US10114099申请日：20020402公开号：US06902990B2公开日：20050607

专利附图：

摘要：A method for separating a semiconductor wafer into several thousand devices

or dies by laser ablation. Semiconductor wafers are initially pre-processed to createmultiple devices, such as blue LEDs, on the wafers. The wafers are then mounted withtape coated with a generally high level adhesive. The mounted wafer is then placed on avacuum chuck (which is itself positioned on a computer controlled positioning table) tohold it in place during the cutting process. The cutting surface is then covered with aprotective layer to prevent contamination from the effluent resulting from the actualcutting process. A laser beam is generated and passed through optical elements andmasks to create a pattern, such as a line or multiple lines. The patterned laser projectionis directed at the wafer at a substantially normal angle and applied to the wafer until atleast a partial cut is achieved through it. A mechanical separation process completes theseparation when only a partial cut is achieved by the patterned laser projection. The diesare then transferred to a grip ring for further processing.

申请人：Mark Gottfried,Michael G. Brown,Ivan Eliashevich,Robert F. Karlicek, Jr.,JamesE. Nering

地址：Bridgewater NJ US,Clinton NJ US,Millburn NJ US,Flemington NJ US,Summit NJUS

国籍：US,US,US,US,US

代理机构：Gibbons, Del Deo, Dolan, Griffinger & Vecchione

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