Method of making thin film transistors

专利名称：Method of making thin film transistors发明人：Tomizo Matsuoka,Mamoru Takeda,Ikunori

Kobayashi

申请号：US08/099460申请日：19930730公开号：US05334544A公开日：19940802

摘要：A method of making thin film transistors such that the first conductive layer of athin film transistor is formed with an aluminum system metal having a low electricresistance, and another metal capable of anodic oxidation is deposited to prevent thealuminum system metal from producing hillocks. The metal capable of anodic oxidationand part of the aluminum system metal are changed into an insulator by an anodicoxidation treatment. In all, the gate insulator of the thin film transistor comprises threelayers of aluminum oxide, an oxide of the metal capable of anodic oxidation, and siliconnitride. The method makes it possible to form the lower-layer wiring and gate electrodehaving a low electric resistance and a flawless gate insulator having excellent insulativequality.

申请人：MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

代理机构：Wenderoth, Lind & Ponack

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